The company's technology and products cover: Protection devices (protection devices), Thyristor (Thyristor), Rectifier diodes (Rectifier). It maintains a leading position in many technical fields, such as multi-layer laminated technology, high junction temperature and low leakage current technology, multi-layer passivation process, super anti-interference thyristor technology. With the accumulation of many core technical personnel in the fields of design and manufacturing, Liown can provide customers with targeted chip product design and systematic application solutions.
Cut-off voltage: 3.3V~600V;
Peak power: 200~30KW
Current: up to 30KA(8/20uS)
High junction temperature: up to 175℃
Leading leakage current control and lamination process
¤ Ultra-high breakdown voltage capacity: 800V / 1200
¤ Soft response, low Qrr design.
¤ Tj(max) = 150 °C (175 under R/D).
¤ Using epitaxial wafer process, with good voltage consistency.
¤ Platinum Life time killer process.
¤ 5-inch wafers with better cost advantageous.
¤ Low capacitance design (TSS < 35pf).
¤ Stable surge resistance. ¤ Stable process/equipment.
¤ Nickel plating process/evaporation aluminum plating; silver is available; used widely
¤ Thyristor chip with ESD protection
¤ Subject to ESD> 2 KV capacity (IEC 61000-4-5)
¤ With a high junction temperature of 150 degrees
¤ High dynamic capability/current commutation
¤ Reduce circuit space usage costs